IRFZ48NS irfz48nl power mosfet advanced process technology surface mount (IRFZ48NS) low-profile through-hole (irfz48nl) 175c operating temperature fast switching fully avalanche rated the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irfz48nl) is available for low- profile applications. description v dss = 55v r ds(on) = 0.014 ? i d = 64a 2 d pak to-262 s d g parameter typ. max. units r qjc junction-to-case ??? 1.15 r qja junction-to-ambient ( pcb mounted,steady-state)** ??? 40 thermal resistance c/w absolute maximum ratings parameter max. units i d @ t c = 25 c continuous drain current, v gs @ 10v 64 i d @ t c = 100 c continuous drain current, v gs @ 10v 45 a i dm pulsed drain current 210 p d @t a = 25 c power dissipation 3.8 w p d @t c = 25 c power dissipation 130 w linear derating factor 0.83 w/ c v gs gate-to-source voltage 20 v i ar avalanche current 32 a e ar repetitive avalanche energy 13 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c 2014-8-10 1 www.kersemi.com
IRFZ48NS/irfz48nl parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? vv gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.058 ??? v/ c reference to 25 c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 14 m ? v gs = 10v, i d = 32a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 24 ??? ??? sv ds = 25v, i d = 32a ??? ??? 25 a v ds = 55v, v gs = 0v ??? ??? 250 v ds = 44v, v gs = 0v, t j = 150 c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 81 i d = 32a q gs gate-to-source charge ??? ??? 19 nc v ds = 44v q gd gate-to-drain ("miller") charge ??? ??? 30 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 12 ??? v dd = 28v t r rise time ??? 78 ??? i d = 32a t d(off) turn-off delay time ??? 34 ??? r g = 0.85 ? t f fall time ??? 50 ??? v gs = 10v, see fig. 10 nh between lead, and center of die contact c iss input capacitance ??? 1970 ??? v gs = 0v c oss output capacitance ??? 470 ??? v ds = 25v c rss reverse transfer capacitance ??? 120 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 700 190 mj i as = 32a, l = 0.37mh electrical characteristics @ t j = 25c (unless otherwise specified) l s internal source inductance ??? 7.5 ??? i gss ns i dss drain-to-source leakage current s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25 c, i s = 32a, v gs = 0v t rr reverse recovery time ??? 68 100 ns t j = 25 c, i f = 32a q rr reverse recovery charge ??? 220 330 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 64 210 a starting t j = 25 c, l = 0.37mh r g = 25 ? , i as = 32a. (see figure 12) repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 32a, di/dt 220a/s, v dd v (br)dss , t j 175 c pulse width 400s; duty cycle 2%. this is the destructive value not limited to the thermal limit. this is the thermal limited value. notes: 2014-8-10 2 www.kersemi.com
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 4 6 8 10 12 v = 25v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 64a 2014-8-10 3 www.kersemi.com IRFZ48NS/irfz48nl
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 2500 3000 3500 v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 0 20 40 60 80 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 32a v = 11v ds v = 27v ds v = 44v ds 0.1 1 10 100 1000 0.2 0.7 1.2 1.7 2.2 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25 c tj = 175 c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 2014-8-10 4 www.kersemi.com IRFZ48NS/irfz48nl
fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 t , case temperature ( c) i , drain current (a) c d v ds 90% 10% v gs t d(on) t r t d(off) t f v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 10a. switching time test circuit fig 10b. switching time waveforms 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 2014-8-10 5 www.kersemi.com IRFZ48NS/irfz48nl
q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v gs fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 60 120 180 240 300 360 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 13a 23a 32a 2014-8-10 6 www.kersemi.com IRFZ48NS/irfz48nl
peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - r g v dd ? dv/dt controlled by r g ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t * circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer * reverse polarity of d.u.t for p-channel v gs [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 14. for n-channel hexfet ? power mosfets 2014-8-10 7 www.kersemi.com IRFZ48NS/irfz48nl
d 2 pak package outline d 2 pak part marking information 10.16 (.400) re f. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r e f. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - ga te 2 - d r ain 3 - s ou rc e 2.54 (.100) 2x part number international rectifier logo date code (yyw w ) yy = year ww = week assembly lot code f530s 9b 1m 9246 a 2014-8-10 8 www.kersemi.com IRFZ48NS/irfz48nl
package outline to-262 outline to-262 part marking information 2014-8-10 9 www.kersemi.com IRFZ48NS/irfz48nl
tape & reel information d 2 pak 3 4 4 trr feed direction 1.85 ( .0 7 3 ) 1.65 ( .0 6 5 ) 1.60 ( .063 ) 1.50 ( .059 ) 4.10 ( .1 6 1 ) 3.90 ( .1 5 3 ) trl feed direction 10.90 ( .42 9 ) 10.70 ( .42 1 ) 16.10 ( .634 ) 15.90 ( .626 ) 1.75 ( .069 ) 1.25 ( .049 ) 11.60 ( .457 ) 11.40 ( .449 ) 15.42 ( .609 ) 15.22 ( .601 ) 4.72 ( .136 ) 4.52 ( .178 ) 24.30 ( .957 ) 23.90 ( .941 ) 0.368 ( .0145 ) 0.342 ( .0135 ) 1.60 ( .06 3 ) 1.50 ( .05 9 ) 13.50 ( .532 ) 12.80 ( .504 ) 330.00 ( 14.173 ) max. 27.40 ( 1.079 ) 23.90 ( .9 41 ) 60.00 ( 2.362 ) min . 30.40 ( 1.197 ) max. 26.40 ( 1.039 ) 24.40 ( .961 ) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 2014-8-10 10 www.kersemi.com IRFZ48NS/irfz48nl
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